| PART |
Description |
Maker |
| K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| KM44C16000B KM44C16100B |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| KM44V1000D |
1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
| KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics
Samsung semiconductor
|
| KM48V8100B |
8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8浣?CMOS ?ㄦ?RAM(甯?揩??〉妯″?))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| A42L8316 A42L8316S A42L8316S-30 A42L8316V-30U A42L |
40ns; self refresh 256K x 16 CMOS dynamic RAM with EDO page moge
256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMICC[AMIC Technology]
|
| KM48V2100C |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8浣?MOS ?ㄦ?RAM(甯?揩??〉妯″?))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4E16708112D K4E160811D K4E160811D-B K4E160811D-F |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
|
Samsung Electronic
|
| V53C16125H V53C16125HK60 V53C16125HT50 |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
128K x 16bit high performance fasr page mode CMOS dynamic RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp
Mosel Vitelic Corp
|
